Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
TK12P60W,RVQ
RFQ
VIEW
RFQ
2,574
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 600V 11.5A DPAK DTMOSIV Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 100W (Tc) N-Channel Super Junction 600V 11.5A (Ta) 340 mOhm @ 5.8A, 10V 3.7V @ 600µA 25nC @ 10V 890pF @ 300V 10V ±30V
TK12P60W,RVQ
RFQ
VIEW
RFQ
3,712
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 600V 11.5A DPAK DTMOSIV Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 100W (Tc) N-Channel Super Junction 600V 11.5A (Ta) 340 mOhm @ 5.8A, 10V 3.7V @ 600µA 25nC @ 10V 890pF @ 300V 10V ±30V
AUIRFR4292
RFQ
VIEW
RFQ
2,960
In-stock
Infineon Technologies MOSFET N CH 250V 9.3A DPAK HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 100W (Tc) N-Channel - 250V 9.3A (Tc) 345 mOhm @ 5.6A, 10V 5V @ 50µA 20nC @ 10V 705pF @ 25V 10V ±20V