- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | |||||||||||||||||||||||||
|
VIEW |
2,636
In-stock
|
NXP USA Inc. | MOSFET N-CH 20V 3.2A SOT-23- | - | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 380mW (Ta) | N-Channel | 20V | 3.2A (Ta) | 35 mOhm @ 3.2A, 4.5V | 1.5V @ 250µA | 7.4nC @ 4.5V | 420pF @ 15V | 2.5V, 4.5V | ±12V | |||
|
VIEW |
1,819
In-stock
|
Vishay Siliconix | MOSFET P-CH 12V 3.2A SOT23 | TrenchFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 750mW (Ta) | P-Channel | 12V | 3.2A (Ta) | 51 mOhm @ 4A, 4.5V | 450mV @ 250µA (Min) | 15nC @ 4.5V | 1225pF @ 6V | 1.8V, 4.5V | ±8V | |||
|
VIEW |
2,359
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 3.2A TSM | π-MOSVI | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 1.25W (Ta) | N-Channel | 30V | 3.2A (Ta) | 120 mOhm @ 1.6A, 4V | - | - | 152pF @ 10V | 2.5V, 4V | ±10V |