- Series :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,128
In-stock
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Infineon Technologies | MOSFET N-CH 55V 64A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 130W (Tc) | N-Channel | 55V | 64A (Tc) | 14 mOhm @ 32A, 10V | 4V @ 250µA | 81nC @ 10V | 1970pF @ 25V | 10V | ±20V | |||
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VIEW |
2,536
In-stock
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Infineon Technologies | MOSFET N-CH 55V 64A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 130W (Tc) | N-Channel | 55V | 64A (Tc) | 14 mOhm @ 32A, 10V | 4V @ 250µA | 81nC @ 10V | 1970pF @ 25V | 10V | ±20V | |||
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VIEW |
3,090
In-stock
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Infineon Technologies | MOSFET N-CH 30V 54A D2PAK | FETKY™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | - | N-Channel | 30V | 54A (Tc) | 14 mOhm @ 32A, 10V | - | 44nC @ 4.5V | 2300pF @ 25V | 4.5V, 10V | ±16V |