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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRFU3806PBF	RFQ VIEW	PDF RFQ	2,880 In-stock	Infineon Technologies	MOSFET N-CH 60V 43A I-PAK		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	IPAK (TO-251)	71W (Tc)	N-Channel	-	60V	43A (Tc)	15.8 mOhm @ 25A, 10V	4V @ 50µA	30nC @ 10V	1150pF @ 50V	10V	±20V
	IRFU1018EPBF	RFQ VIEW	PDF RFQ	749 In-stock	Infineon Technologies	MOSFET N-CH 60V 56A I-PAK		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	IPAK (TO-251)	110W (Tc)	N-Channel	-	60V	56A (Tc)	8.4 mOhm @ 47A, 10V	4V @ 100µA	69nC @ 10V	2290pF @ 50V	10V	±20V
	STU10P6F6	RFQ VIEW	PDF RFQ	1,049 In-stock	STMicroelectronics	MOSFET P-CH 60V 10A IPAK		DeepGATE™, STripFET™ VI	Obsolete	Tube	MOSFET (Metal Oxide)	175°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	IPAK (TO-251)	35W (Tc)	P-Channel	-	60V	10A (Tc)	160 mOhm @ 5A, 10V	4V @ 250µA	6.4nC @ 10V	340pF @ 48V	10V	±20V
	IRFU9014N	RFQ VIEW	PDF RFQ	941 In-stock	Infineon Technologies	MOSFET P-CH 60V 5.1A I-PAK		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	IPAK (TO-251)	2.5W (Ta), 25W (Tc)	P-Channel	-	60V	5.1A (Tc)	500 mOhm @ 3.1A, 10V	4V @ 250µA	12nC @ 10V	270pF @ 25V	10V	±20V

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