- Manufacture :
- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
904
In-stock
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ON Semiconductor | MOSFET N-CH 50V 15A D2PAK | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -65°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 50W (Tc) | N-Channel | - | 50V | 15A (Tc) | 80 mOhm @ 15A, 10V | 2V @ 250µA | 17nC @ 5V | 600pF @ 25V | 5V, 10V | ±16V | |||
|
VIEW |
1,812
In-stock
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Infineon Technologies | MOSFET N-CH 30V 8.8A PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerVDFN | 6-PQFN (2x2) | 2.1W (Ta) | N-Channel | - | 30V | 8.8A (Ta), 19A (Tc) | 16 mOhm @ 8.5A, 10V | 2.35V @ 25µA | 8.7nC @ 10V | 600pF @ 25V | 4.5V, 10V | ±20V | |||
,%20SC-63.JPG)
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VIEW |
2,382
In-stock
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ON Semiconductor | MOSFET N-CH 600V 4.6A DPAK | SuperFET™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 54W (Tc) | N-Channel | - | 600V | 4.6A (Tc) | 950 mOhm @ 2.3A, 10V | 5V @ 250µA | 16nC @ 10V | 600pF @ 25V | 10V | ±30V | |||
