- Manufacture :
- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
3,848
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 13A 8TSON | U-MOSVI-H | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 22W (Tc) | N-Channel | - | 30V | 13A (Ta) | 16.9 mOhm @ 6.5A, 10V | 2.3V @ 200µA | 17nC @ 10V | 1300pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,250
In-stock
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STMicroelectronics | MOSFET N-CH 650V 8.5A 8POWERFLAT | MDmesh™ V | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) | 48W (Tc) | N-Channel | - | 650V | 8.5A (Tc) | 530 mOhm @ 4.25A, 10V | 5V @ 250µA | 17nC @ 10V | 644pF @ 100V | 10V | ±25V | |||
