- Manufacture :
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- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,096
In-stock
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STMicroelectronics | MOSFET N-CH 30V 9A 8-SOIC | STripFET™ II | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Tc) | N-Channel | - | 30V | 9A (Tc) | 20 mOhm @ 4.5A, 10V | 1V @ 250µA | 12.5nC @ 4.5V | 730pF @ 25V | 5V, 10V | ±18V | |||
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VIEW |
1,452
In-stock
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ON Semiconductor | MOSFET N-CH 200V 9A DPAK | QFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 55W (Tc) | N-Channel | - | 200V | 9A (Tc) | 280 mOhm @ 4.5A, 10V | 2V @ 250µA | 21nC @ 5V | 1080pF @ 25V | 5V, 10V | ±20V | |||
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VIEW |
625
In-stock
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ON Semiconductor | MOSFET N-CH 200V DPAK | QFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 55W (Tc) | N-Channel | - | 200V | 9A (Tc) | 280 mOhm @ 4.5A, 10V | 2V @ 250µA | 21nC @ 5V | 1080pF @ 25V | 5V, 10V | ±20V |