- Packaging :
- Mounting Type :
- Supplier Device Package :
- Applied Filters :
5 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
1,785
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 89A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 170W (Tc) | N-Channel | - | 55V | 89A (Tc) | 10 mOhm @ 46A, 10V | 2V @ 250µA | 98nC @ 5V | 3600pF @ 25V | 4V, 10V | ±16V | |||
|
VIEW |
606
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 89A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 170W (Tc) | N-Channel | - | 55V | 89A (Tc) | 10 mOhm @ 46A, 10V | 2V @ 250µA | 98nC @ 5V | 3600pF @ 25V | 4V, 10V | ±16V | |||
|
VIEW |
3,662
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 89A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 170W (Tc) | N-Channel | - | 55V | 89A (Tc) | 10 mOhm @ 46A, 10V | 2V @ 250µA | 98nC @ 5V | 3600pF @ 25V | 4V, 10V | ±16V | |||
|
VIEW |
2,676
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 89A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 170W (Tc) | N-Channel | - | 55V | 89A (Tc) | 10 mOhm @ 46A, 10V | 2V @ 250µA | 98nC @ 5V | 3600pF @ 25V | 4V, 10V | ±16V | |||
|
VIEW |
3,945
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 89A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 170W (Tc) | N-Channel | - | 55V | 89A (Tc) | 10 mOhm @ 46A, 10V | 2V @ 250µA | 98nC @ 5V | 3600pF @ 25V | 4V, 10V | ±16V |