Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BUZ73LHXKSA1
RFQ
VIEW
RFQ
3,467
In-stock
Infineon Technologies MOSFET N-CH 200V 7A TO220-3 SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 40W (Tc) N-Channel - 200V 7A (Tc) 400 mOhm @ 3.5A, 5V 2V @ 1mA - 840pF @ 25V 5V ±20V
BUZ73ALHXKSA1
RFQ
VIEW
RFQ
1,958
In-stock
Infineon Technologies MOSFET N-CH 200V 5.5A TO220-3 SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 40W (Tc) N-Channel - 200V 5.5A (Tc) 600 mOhm @ 3.5A, 5V 2V @ 1mA - 840pF @ 25V 5V ±20V
MTD6P10E
RFQ
VIEW
RFQ
1,911
In-stock
ON Semiconductor MOSFET P-CH 100V 6A DPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 1.75W (Ta), 50W (Tc) P-Channel - 100V 6A (Tc) 660 mOhm @ 3A, 10V 4V @ 250µA 22nC @ 10V 840pF @ 25V 10V ±15V
BUZ73L
RFQ
VIEW
RFQ
1,920
In-stock
Infineon Technologies MOSFET N-CH 200V 7A TO-220AB SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 40W (Tc) N-Channel - 200V 7A (Tc) 400 mOhm @ 3.5A, 5V 2V @ 1mA - 840pF @ 25V 5V ±20V
BUZ73AL
RFQ
VIEW
RFQ
1,896
In-stock
Infineon Technologies MOSFET N-CH 200V 5.5A TO-220AB SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 40W (Tc) N-Channel - 200V 5.5A (Tc) 600 mOhm @ 3.5A, 5V 2V @ 1mA - 840pF @ 25V 5V ±20V
IRLL3303
RFQ
VIEW
RFQ
1,663
In-stock
Infineon Technologies MOSFET N-CH 30V 4.6A SOT223 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1W (Ta) N-Channel - 30V 4.6A (Ta) 31 mOhm @ 4.6A, 10V 1V @ 250µA 50nC @ 10V 840pF @ 25V 4.5V, 10V ±16V
IRLL3303TR
RFQ
VIEW
RFQ
2,961
In-stock
Infineon Technologies MOSFET N-CH 30V 4.6A SOT223 HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1W (Ta) N-Channel - 30V 4.6A (Ta) 31 mOhm @ 4.6A, 10V 1V @ 250µA 50nC @ 10V 840pF @ 25V 4.5V, 10V ±16V
IRLL3303TR
RFQ
VIEW
RFQ
1,034
In-stock
Infineon Technologies MOSFET N-CH 30V 4.6A SOT223 HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1W (Ta) N-Channel - 30V 4.6A (Ta) 31 mOhm @ 4.6A, 10V 1V @ 250µA 50nC @ 10V 840pF @ 25V 4.5V, 10V ±16V