- Manufacture :
- Packaging :
- Operating Temperature :
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- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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8 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,590
In-stock
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ON Semiconductor | MOSFET N-CH 900V 2.2A D2PAK | QFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 3.13W (Ta), 85W (Tc) | N-Channel | - | 900V | 2.2A (Tc) | 7.2 Ohm @ 1.1A, 10V | 5V @ 250µA | 15nC @ 10V | 500pF @ 25V | 10V | ±30V | |||
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VIEW |
1,915
In-stock
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ON Semiconductor | MOSFET N-CH 900V 2.2A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.13W (Ta), 85W (Tc) | N-Channel | - | 900V | 2.2A (Tc) | 7.2 Ohm @ 1.1A, 10V | 5V @ 250µA | 15nC @ 10V | 500pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,522
In-stock
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ON Semiconductor | MOSFET N-CH 900V 1.4A TO-220F | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 35W (Tc) | N-Channel | - | 900V | 1.4A (Tc) | 7.2 Ohm @ 700mA, 10V | 5V @ 250µA | 15nC @ 10V | 500pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,362
In-stock
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ON Semiconductor | MOSFET N-CH 900V 1.7A IPAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 2.5W (Ta), 50W (Tc) | N-Channel | - | 900V | 1.7A (Tc) | 7.2 Ohm @ 850mA, 10V | 5V @ 250µA | 15nC @ 10V | 500pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,102
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 900V 1A DP | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DP | 40W (Tc) | N-Channel | - | 900V | 1A (Ta) | 9 Ohm @ 500mA, 10V | 4V @ 1mA | 15nC @ 10V | 350pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,273
In-stock
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ON Semiconductor | MOSFET N-CH 900V 1.7A DPAK | QFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 50W (Tc) | N-Channel | - | 900V | 1.7A (Tc) | 7.2 Ohm @ 850mA, 10V | 5V @ 250µA | 15nC @ 10V | 500pF @ 25V | 10V | ±30V | |||
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VIEW |
1,592
In-stock
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ON Semiconductor | MOSFET N-CH 900V 1.7A DPAK | QFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 50W (Tc) | N-Channel | - | 900V | 1.7A (Tc) | 7.2 Ohm @ 850mA, 10V | 5V @ 250µA | 15nC @ 10V | 500pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,707
In-stock
|
ON Semiconductor | MOSFET N-CH 900V 1.7A DPAK | QFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 50W (Tc) | N-Channel | - | 900V | 1.7A (Tc) | 7.2 Ohm @ 850mA, 10V | 5V @ 250µA | 15nC @ 10V | 500pF @ 25V | 10V | ±30V |