Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFP4228PBF
RFQ
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RFQ
3,843
In-stock
Infineon Technologies MOSFET N-CH 150V 78A TO-247AC HEXFET® Obsolete Bulk MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 310W (Tc) N-Channel - 150V 78A (Tc) 15.5 mOhm @ 33A, 10V 5V @ 250µA 107nC @ 10V 4530pF @ 25V 10V ±30V
IRFP4232PBF
RFQ
VIEW
RFQ
819
In-stock
Infineon Technologies MOSFET N-CH 250V 60A TO-247AC HEXFET® Obsolete Bulk MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 430W (Tc) N-Channel - 250V 60A (Tc) 35.7 mOhm @ 42A, 10V 5V @ 250µA 240nC @ 10V 7290pF @ 25V 10V ±20V
SIHF18N50C-E3
RFQ
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RFQ
3,754
In-stock
Vishay Siliconix MOSFET N-CH 500V 18A TO220 - Obsolete Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 38W (Tc) N-Channel - 500V 18A (Tc) 270 mOhm @ 10A, 10V 5V @ 250µA 76nC @ 10V 2942pF @ 25V 10V ±30V
IRFPS3810
RFQ
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RFQ
1,789
In-stock
Infineon Technologies MOSFET N-CH 100V 170A SUPER247 HEXFET® Obsolete Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-274AA SUPER-247 (TO-274AA) 580W (Tc) N-Channel - 100V 170A (Tc) 9 mOhm @ 100A, 10V 5V @ 250µA 390nC @ 10V 6790pF @ 25V 10V ±30V