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- Power Dissipation (Max) :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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723
In-stock
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Vishay Siliconix | MOSFET N-CH 60V 10A D2PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.7W (Ta), 43W (Tc) | N-Channel | 60V | 10A (Tc) | 200 mOhm @ 6A, 10V | 4V @ 250µA | 11nC @ 10V | 300pF @ 25V | 10V | ±20V | |||
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VIEW |
3,319
In-stock
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Vishay Siliconix | MOSFET N-CH 60V 10A D2PAK | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.7W (Ta), 43W (Tc) | N-Channel | 60V | 10A (Tc) | 200 mOhm @ 6A, 10V | 4V @ 250µA | 11nC @ 10V | 300pF @ 25V | 10V | ±20V | |||
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VIEW |
3,826
In-stock
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Vishay Siliconix | MOSFET P-CH 200V 1.8A D2PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3W (Ta), 20W (Tc) | P-Channel | 200V | 1.8A (Tc) | 3 Ohm @ 900mA, 10V | 4V @ 250µA | 11nC @ 10V | 170pF @ 25V | 10V | ±20V | |||
