Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPP80P04P405AKSA1
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Infineon Technologies MOSFET P-CH TO220-3 Automotive, AEC-Q101, OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 125W (Tc) P-Channel - 40V 80A (Tc) 5.2 mOhm @ 80A, 10V 4V @ 250µA 151nC @ 10V 10300pF @ 25V 10V ±20V
IPI80P04P405AKSA1
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958
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Infineon Technologies MOSFET P-CH TO262-3 Automotive, AEC-Q101, OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 125W (Tc) P-Channel - 40V 80A (Tc) 5.2 mOhm @ 80A, 10V 4V @ 250µA 151nC @ 10V 10300pF @ 25V 10V ±20V