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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRFBC30L	RFQ VIEW	PDF RFQ	3,415 In-stock	Vishay Siliconix	MOSFET N-CH 600V 3.6A TO-262		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK	3.1W (Ta), 74W (Tc)	N-Channel	600V	3.6A (Tc)	2.2 Ohm @ 2.2A, 10V	4V @ 250µA	31nC @ 10V	660pF @ 25V	10V	±20V
	IRFBC30	RFQ VIEW	PDF RFQ	1,967 In-stock	Vishay Siliconix	MOSFET N-CH 600V 3.6A TO-220AB		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	74W (Tc)	N-Channel	600V	3.6A (Tc)	2.2 Ohm @ 2.2A, 10V	4V @ 250µA	31nC @ 10V	660pF @ 25V	10V	±20V
	IRFBC30LPBF	RFQ VIEW	PDF RFQ	2,103 In-stock	Vishay Siliconix	MOSFET N-CH 600V 3.6A TO-262		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262-3	3.1W (Ta), 74W (Tc)	N-Channel	600V	3.6A (Tc)	2.2 Ohm @ 2.2A, 10V	4V @ 250µA	31nC @ 10V	660pF @ 25V	10V	±20V
	IRFBC30S	RFQ VIEW	PDF RFQ	3,789 In-stock	Vishay Siliconix	MOSFET N-CH 600V 3.6A D2PAK		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3.1W (Ta), 74W (Tc)	N-Channel	600V	3.6A (Tc)	2.2 Ohm @ 2.2A, 10V	4V @ 250µA	31nC @ 10V	660pF @ 25V	10V	±20V

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