Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTQ200N085T
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RFQ
3,612
In-stock
IXYS MOSFET N-CH 85V 200A TO-3P TrenchMV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 480W (Tc) N-Channel - 85V 200A (Tc) 5 mOhm @ 25A, 10V 4V @ 250µA 152nC @ 10V 7600pF @ 25V 10V ±20V
IXTP200N085T
RFQ
VIEW
RFQ
997
In-stock
IXYS MOSFET N-CH 85V 200A TO-220 TrenchMV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 480W (Tc) N-Channel - 85V 200A (Tc) 5 mOhm @ 25A, 10V 4V @ 250µA 152nC @ 10V 7600pF @ 25V 10V ±20V
IXTH200N085T
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VIEW
RFQ
1,430
In-stock
IXYS MOSFET N-CH 85V 200A TO-247 TrenchMV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 480W (Tc) N-Channel - 85V 200A (Tc) 5 mOhm @ 25A, 10V 4V @ 250µA 152nC @ 10V 7600pF @ 25V 10V ±20V
IXTA200N085T7
RFQ
VIEW
RFQ
3,941
In-stock
IXYS MOSFET N-CH 85V 200A TO-263-7 TrenchMV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab), TO-263CB TO-263-7 (IXTA..7) 480W (Tc) N-Channel - 85V 200A (Tc) 5 mOhm @ 25A, 10V 4V @ 250µA 152nC @ 10V 7600pF @ 25V 10V ±20V
IXTA200N085T
RFQ
VIEW
RFQ
2,532
In-stock
IXYS MOSFET N-CH 85V 200A TO-263 TrenchMV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 480W (Tc) N-Channel - 85V 200A (Tc) 5 mOhm @ 25A, 10V 4V @ 250µA 152nC @ 10V 7600pF @ 25V 10V ±20V