Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF9530STRR
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RFQ
1,373
In-stock
Vishay Siliconix MOSFET P-CH 100V 12A D2PAK - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.7W (Ta), 88W (Tc) P-Channel 100V 12A (Tc) 300 mOhm @ 7.2A, 10V 4V @ 250µA 38nC @ 10V 860pF @ 25V 10V ±20V
IRFI530N
RFQ
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RFQ
3,052
In-stock
Infineon Technologies MOSFET N-CH 100V 12A TO220FP HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220AB Full-Pak 41W (Tc) N-Channel 100V 12A (Tc) 110 mOhm @ 6.6A, 10V 4V @ 250µA 44nC @ 10V 640pF @ 25V 10V ±20V
IRF9530
RFQ
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RFQ
2,542
In-stock
Vishay Siliconix MOSFET P-CH 100V 12A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 88W (Tc) P-Channel 100V 12A (Tc) 300 mOhm @ 7.2A, 10V 4V @ 250µA 38nC @ 10V 860pF @ 25V 10V ±20V
IRF9530STRL
RFQ
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RFQ
1,866
In-stock
Vishay Siliconix MOSFET P-CH 100V 12A D2PAK - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.7W (Ta), 88W (Tc) P-Channel 100V 12A (Tc) 300 mOhm @ 7.2A, 10V 4V @ 250µA 38nC @ 10V 860pF @ 25V 10V ±20V
IRF9530S
RFQ
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RFQ
2,847
In-stock
Vishay Siliconix MOSFET P-CH 100V 12A D2PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.7W (Ta), 88W (Tc) P-Channel 100V 12A (Tc) 300 mOhm @ 7.2A, 10V 4V @ 250µA 38nC @ 10V 860pF @ 25V 10V ±20V