- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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| GLOBAL STOCKS | |||||||||||||||||||||||||
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VIEW |
2,800
In-stock
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Vishay Siliconix | MOSFET N-CH 600V 6.2A TO-262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | - | N-Channel | 600V | 6.2A (Tc) | 1.2 Ohm @ 3.7A, 10V | 4V @ 250µA | 42nC @ 10V | 1036pF @ 25V | 10V | ±30V | |||
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|
VIEW |
3,552
In-stock
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Vishay Siliconix | MOSFET N-CH 600V 6.2A TO-262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3.1W (Ta), 130W (Tc) | N-Channel | 600V | 6.2A (Tc) | 1.2 Ohm @ 3.7A, 10V | 4V @ 250µA | 60nC @ 10V | 1300pF @ 25V | 10V | ±20V | |||
