Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRF7324D1PBF
RFQ
VIEW
RFQ
1,698
In-stock
Infineon Technologies MOSFET P-CH 20V 2.2A 8-SOIC FETKY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2W (Ta) P-Channel Schottky Diode (Isolated) 20V 2.2A (Ta) 270 mOhm @ 1.2A, 4.5V 700mV @ 250µA 7.8nC @ 4.5V 260pF @ 15V 2.7V, 4.5V ±12V
IRF7324D1TR
RFQ
VIEW
RFQ
1,104
In-stock
Infineon Technologies MOSFET P-CH 20V 2.2A 8-SOIC FETKY™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2W (Ta) P-Channel Schottky Diode (Isolated) 20V 2.2A (Ta) 270 mOhm @ 1.2A, 4.5V 700mV @ 250µA 7.8nC @ 4.5V 260pF @ 15V 2.7V, 4.5V ±12V
IRF7324D1TRPBF
RFQ
VIEW
RFQ
975
In-stock
Infineon Technologies MOSFET P-CH 20V 2.2A 8-SOIC FETKY™ Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2W (Ta) P-Channel Schottky Diode (Isolated) 20V 2.2A (Ta) 270 mOhm @ 1.2A, 4.5V 700mV @ 250µA 7.8nC @ 4.5V 260pF @ 15V 2.7V, 4.5V ±12V
IRF7324D1TRPBF
RFQ
VIEW
RFQ
2,249
In-stock
Infineon Technologies MOSFET P-CH 20V 2.2A 8-SOIC FETKY™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2W (Ta) P-Channel Schottky Diode (Isolated) 20V 2.2A (Ta) 270 mOhm @ 1.2A, 4.5V 700mV @ 250µA 7.8nC @ 4.5V 260pF @ 15V 2.7V, 4.5V ±12V
IRF7324D1TRPBF
RFQ
VIEW
RFQ
2,451
In-stock
Infineon Technologies MOSFET P-CH 20V 2.2A 8-SOIC FETKY™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2W (Ta) P-Channel Schottky Diode (Isolated) 20V 2.2A (Ta) 270 mOhm @ 1.2A, 4.5V 700mV @ 250µA 7.8nC @ 4.5V 260pF @ 15V 2.7V, 4.5V ±12V
IRF7324D1
RFQ
VIEW
RFQ
1,382
In-stock
Infineon Technologies MOSFET P-CH 20V 2.2A 8-SOIC FETKY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2W (Ta) P-Channel Schottky Diode (Isolated) 20V 2.2A (Ta) 270 mOhm @ 1.2A, 4.5V 700mV @ 250µA 7.8nC @ 4.5V 260pF @ 15V 2.7V, 4.5V ±12V