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- Power Dissipation (Max) :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,507
In-stock
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NXP USA Inc. | MOSFET N-CH 200V 4.8A DPAK | TrenchMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 42W (Tc) | N-Channel | - | 200V | 4.8A (Tc) | 800 mOhm @ 2.9A, 10V | 4V @ 250µA | 14nC @ 10V | 280pF @ 25V | 10V | ±20V | |||
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VIEW |
813
In-stock
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IXYS | MOSFET N-CH 500V 4.8A TO-252AA | PolarHV™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 89W (Tc) | N-Channel | - | 500V | 4.8A (Tc) | 1.4 Ohm @ 2.4A, 10V | 5.5V @ 50µA | 12.6nC @ 10V | 620pF @ 25V | 10V | ±30V | |||
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VIEW |
3,123
In-stock
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ON Semiconductor | MOSFET N-CH 800V 4.8A D2PAK | QFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 3.13W (Ta), 140W (Tc) | N-Channel | - | 800V | 4.8A (Tc) | 2.6 Ohm @ 2.4A, 10V | 5V @ 250µA | 33nC @ 10V | 1250pF @ 25V | 10V | ±30V | |||
