- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
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10 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,045
In-stock
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Infineon Technologies | MOSFET N-CH 650V 11A TO-262 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 125W (Tc) | N-Channel | - | 650V | 11A (Tc) | 440 mOhm @ 7A, 10V | 5V @ 500µA | 64nC @ 10V | 1200pF @ 25V | 10V | ±20V | |||
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VIEW |
1,480
In-stock
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Infineon Technologies | MOSFET N-CH 650V 11A TO-262 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 125W (Tc) | N-Channel | - | 650V | 11A (Tc) | 380 mOhm @ 7A, 10V | 3.9V @ 500µA | 60nC @ 10V | 1200pF @ 25V | 10V | ±20V | |||
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VIEW |
3,922
In-stock
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Infineon Technologies | MOSFET N-CH 600V 11A TO-262 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 125W (Tc) | N-Channel | - | 600V | 11A (Tc) | 380 mOhm @ 7A, 10V | 3.9V @ 500µA | 60nC @ 10V | 1200pF @ 25V | 10V | ±20V | |||
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VIEW |
1,214
In-stock
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Infineon Technologies | MOSFET N-CH 600V 11A TO-262 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 125W (Tc) | N-Channel | - | 600V | 11A (Tc) | 380 mOhm @ 7A, 10V | 5.5V @ 500µA | 54nC @ 10V | 1460pF @ 25V | 10V | ±20V | |||
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VIEW |
2,439
In-stock
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Vishay Siliconix | MOSFET P-CH 200V 11A TO-262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3W (Ta), 125W (Tc) | P-Channel | - | 200V | 11A (Tc) | 500 mOhm @ 6.6A, 10V | 4V @ 250µA | 44nC @ 10V | 1200pF @ 25V | 10V | ±20V | |||
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VIEW |
3,011
In-stock
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Infineon Technologies | MOSFET N-CH 600V 11A I2PAK | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 96W (Tc) | N-Channel | - | 600V | 11A (Tc) | 299 mOhm @ 6.6A, 10V | 3.5V @ 440µA | 29nC @ 10V | 1100pF @ 100V | 10V | ±20V | |||
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VIEW |
897
In-stock
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ON Semiconductor | MOSFET N-CH 600V 11A I2PAK | SuperFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 125W (Tc) | N-Channel | - | 600V | 11A (Tc) | 380 mOhm @ 5.5A, 10V | 5V @ 250µA | 52nC @ 10V | 1490pF @ 25V | 10V | ±30V | |||
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VIEW |
2,666
In-stock
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Vishay Siliconix | MOSFET N-CH 500V 11A TO-262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 | 190W (Tc) | N-Channel | - | 500V | 11A (Tc) | 550 mOhm @ 6.6A, 10V | 4V @ 250µA | 51nC @ 10V | 1426pF @ 25V | 10V | ±30V | |||
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VIEW |
2,166
In-stock
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STMicroelectronics | MOSFET N-CH 650V 11A I2PAK | MDmesh™ | Obsolete | Tube | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 160W (Tc) | N-Channel | - | 650V | 11A (Tc) | 450 mOhm @ 5.5A, 10V | 5V @ 250µA | 30nC @ 10V | 1000pF @ 25V | 10V | ±30V | |||
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VIEW |
2,766
In-stock
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STMicroelectronics | MOSFET N-CH 500V 11A I2PAK | MDmesh™ II | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 100W (Tc) | N-Channel | - | 500V | 11A (Tc) | 380 mOhm @ 5.5A, 10V | 4V @ 250µA | 30nC @ 10V | 940pF @ 50V | 10V | ±25V |