Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
AOT11N60L
RFQ
VIEW
RFQ
2,530
In-stock
Alpha & Omega Semiconductor Inc. MOSFET N-CH 600V 11A TO220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 272W (Tc) N-Channel 600V 11A (Tc) 650 mOhm @ 5.5A, 10V 4.5V @ 250µA 37nC @ 10V 1990pF @ 25V 10V ±30V
Default Photo
RFQ
VIEW
RFQ
2,790
In-stock
Alpha & Omega Semiconductor Inc. MOSFET N-CHANNEL 600V 11A TO220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 278W (Tc) N-Channel 600V 11A (Tc) 440 mOhm @ 5.5A, 10V 5V @ 250µA 42nC @ 10V 2000pF @ 100V 10V ±30V
AOT11C60PL
RFQ
VIEW
RFQ
637
In-stock
Alpha & Omega Semiconductor Inc. MOSFET N-CH - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 298W (Tc) N-Channel 600V 11A (Tc) 420 mOhm @ 5.5A, 10V 5V @ 250µA 50nC @ 10V 2333pF @ 100V 10V ±30V
GP1M011A050H
RFQ
VIEW
RFQ
3,805
In-stock
Global Power Technologies Group MOSFET N-CH 500V 11A TO220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 158W (Tc) N-Channel 500V 11A (Tc) 670 mOhm @ 5.5A, 10V 4V @ 250µA 28nC @ 10V 1423pF @ 25V 10V ±30V
AOT11C60L
RFQ
VIEW
RFQ
690
In-stock
Alpha & Omega Semiconductor Inc. MOSFET N-CH 600V 11A TO220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 278W (Tc) N-Channel 600V 11A (Tc) 400 mOhm @ 5.5A, 10V 5V @ 250µA 42nC @ 10V 2000pF @ 100V 10V ±30V