Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
STP8NM60
RFQ
VIEW
RFQ
3,964
In-stock
STMicroelectronics MOSFET N-CH 650V 8A TO-220 MDmesh™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 100W (Tc) N-Channel - 650V 8A (Tc) 1 Ohm @ 2.5A, 10V 5V @ 250µA 18nC @ 10V 400pF @ 25V 10V ±30V
IRLIZ14G
RFQ
VIEW
RFQ
1,096
In-stock
Vishay Siliconix MOSFET N-CH 60V 8A TO220FP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 27W (Tc) N-Channel - 60V 8A (Tc) 200 mOhm @ 4.8A, 5V 2V @ 250µA 8.4nC @ 5V 400pF @ 25V 4V, 5V ±10V
STP8NM60FP
RFQ
VIEW
RFQ
902
In-stock
STMicroelectronics MOSFET N-CH 650V 8A TO-220FP MDmesh™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 30W (Tc) N-Channel - 650V 8A (Tc) 1 Ohm @ 2.5A, 10V 5V @ 250µA 18nC @ 10V 400pF @ 25V 10V ±30V