- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,067
In-stock
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Infineon Technologies | MOSFET N-CH 25V 30A IPAK | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | PG-TO251-3 | 46W (Tc) | N-Channel | - | 25V | 30A (Tc) | 12.8 mOhm @ 30A, 10V | 2V @ 20µA | 8.3nC @ 5V | 1043pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
2,828
In-stock
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Infineon Technologies | MOSFET N-CH 25V 30A IPAK | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | PG-TO251-3 | 52W (Tc) | N-Channel | - | 25V | 30A (Tc) | 10.4 mOhm @ 30A, 10V | 2V @ 20µA | 11nC @ 5V | 1358pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
3,475
In-stock
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Infineon Technologies | MOSFET N-CH 30V 30A TO251-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | PG-TO251-3 | 31W (Tc) | N-Channel | - | 30V | 30A (Tc) | 13.5 mOhm @ 30A, 10V | 2.2V @ 250µA | 10nC @ 10V | 1000pF @ 15V | 4.5V, 10V | ±20V |