Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
PSMN009-100W,127
RFQ
VIEW
RFQ
3,993
In-stock
NXP USA Inc. MOSFET N-CH 100V 100A SOT429 TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247-3 300W (Tc) N-Channel - 100V 100A (Tc) 9 mOhm @ 25A, 10V 4V @ 1mA 214nC @ 10V 9000pF @ 25V 10V ±20V
PSMN004-55W,127
RFQ
VIEW
RFQ
2,423
In-stock
NXP USA Inc. MOSFET N-CH 55V 100A SOT429 TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247-3 300W (Tc) N-Channel - 55V 100A (Tc) 4.2 mOhm @ 25A, 10V 2V @ 1mA 226nC @ 5V 13000pF @ 25V 4.5V, 10V ±15V
GA50JT17-247
RFQ
VIEW
RFQ
2,440
In-stock
GeneSiC Semiconductor TRANS SJT 1.7KV 100A - Obsolete Tube SiC (Silicon Carbide Junction Transistor) 175°C (TJ) Through Hole TO-247-3 TO-247 583W (Tc) - - 1700V 100A (Tc) 25 mOhm @ 50A - - - - -
STY100NS20FD
RFQ
VIEW
RFQ
651
In-stock
STMicroelectronics MOSFET N-CH 200V 100A MAX247 MESH OVERLAY™ Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 MAX247™ 450W (Tc) N-Channel - 200V 100A (Tc) 24 mOhm @ 50A, 10V 4V @ 250µA 360nC @ 10V 7900pF @ 25V 10V ±20V