Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRF820STRR
RFQ
VIEW
RFQ
1,758
In-stock
Vishay Siliconix MOSFET N-CH 500V 2.5A D2PAK - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 50W (Tc) N-Channel 500V 2.5A (Tc) 3 Ohm @ 1.5A, 10V 4V @ 250µA 24nC @ 10V 360pF @ 25V 10V ±20V
IRF820STRL
RFQ
VIEW
RFQ
640
In-stock
Vishay Siliconix MOSFET N-CH 500V 2.5A D2PAK - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 50W (Tc) N-Channel 500V 2.5A (Tc) 3 Ohm @ 1.5A, 10V 4V @ 250µA 24nC @ 10V 360pF @ 25V 10V ±20V
IRF820L
RFQ
VIEW
RFQ
2,312
In-stock
Vishay Siliconix MOSFET N-CH 500V 2.5A TO-262 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 3.1W (Ta), 50W (Tc) N-Channel 500V 2.5A (Tc) 3 Ohm @ 1.5A, 10V 4V @ 250µA 24nC @ 10V 360pF @ 25V 10V ±20V
IRF820S
RFQ
VIEW
RFQ
2,311
In-stock
Vishay Siliconix MOSFET N-CH 500V 2.5A D2PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 50W (Tc) N-Channel 500V 2.5A (Tc) 3 Ohm @ 1.5A, 10V 4V @ 250µA 24nC @ 10V 360pF @ 25V 10V ±20V
IRF820
RFQ
VIEW
RFQ
2,925
In-stock
Vishay Siliconix MOSFET N-CH 500V 2.5A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 50W (Tc) N-Channel 500V 2.5A (Tc) 3 Ohm @ 1.5A, 10V 4V @ 250µA 24nC @ 10V 360pF @ 25V 10V ±20V
IRFD420
RFQ
VIEW
RFQ
3,991
In-stock
Vishay Siliconix MOSFET N-CH 500V 370MA 4-DIP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1W (Ta) N-Channel 500V 370mA (Ta) 3 Ohm @ 220mA, 10V 4V @ 250µA 24nC @ 10V 360pF @ 25V 10V ±20V