Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STH15NB50FI
RFQ
VIEW
RFQ
2,091
In-stock
STMicroelectronics MOSFET N-CH 500V 10.5A ISOWAT218 PowerMESH™ Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole ISOWATT-218-3 ISOWATT-218 80W (Tc) N-Channel 500V 10.5A (Tc) 360 mOhm @ 7.5A, 10V 5V @ 250µA 80nC @ 10V 3400pF @ 25V 10V ±30V
IRF820
RFQ
VIEW
RFQ
2,402
In-stock
STMicroelectronics MOSFET N-CH 500V 4A TO-220 PowerMESH™ II Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 80W (Tc) N-Channel 500V 4A (Tc) 3 Ohm @ 1.5A, 10V 4V @ 250µA 17nC @ 10V 315pF @ 25V 10V ±30V
STP4NB50
RFQ
VIEW
RFQ
3,233
In-stock
STMicroelectronics MOSFET N-CH 500V 3.8A TO-220 PowerMESH™ Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 80W (Tc) N-Channel 500V 3.8A (Tc) 2.8 Ohm @ 1.9A, 10V 4V @ 250µA 21nC @ 10V 400pF @ 25V 10V ±30V
2SK2916(F)
RFQ
VIEW
RFQ
817
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 500V 14A TO-3PN - Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N)IS 80W (Tc) N-Channel 500V 14A (Ta) 400 mOhm @ 7A, 10V 4V @ 1mA 58nC @ 10V 2600pF @ 10V 10V ±30V