- Manufacture :
- Series :
- Operating Temperature :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,383
In-stock
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Vishay Siliconix | MOSFET N-CH 600V 11A TO-247AC | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 190W (Tc) | N-Channel | 600V | 11A (Tc) | 600 mOhm @ 6.6A, 10V | 4V @ 250µA | 84nC @ 10V | 2300pF @ 25V | 10V | ±30V | |||
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VIEW |
2,177
In-stock
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STMicroelectronics | MOSFET N-CH 800V 11A TO-247 | PowerMESH™ | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 190W (Tc) | N-Channel | 800V | 11A (Tc) | 800 mOhm @ 5.5A, 10V | 5V @ 250µA | 70nC @ 10V | 2900pF @ 25V | 10V | ±30V | |||
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VIEW |
2,666
In-stock
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Vishay Siliconix | MOSFET N-CH 500V 11A TO-262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 | 190W (Tc) | N-Channel | 500V | 11A (Tc) | 550 mOhm @ 6.6A, 10V | 4V @ 250µA | 51nC @ 10V | 1426pF @ 25V | 10V | ±30V | |||
