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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRFI740BTU	RFQ VIEW	PDF RFQ	3,957 In-stock	ON Semiconductor	MOSFET N-CH 400V 10A I2PAK		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK	3.13W (Ta), 134W (Tc)	N-Channel	-	400V	10A (Tc)	540 mOhm @ 5A, 10V	4V @ 250µA	53nC @ 10V	1800pF @ 25V	10V	±30V
	IRL540NL	RFQ VIEW	PDF RFQ	3,234 In-stock	Infineon Technologies	MOSFET N-CH 100V 36A TO-262		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	3.8W (Ta), 140W (Tc)	N-Channel	-	100V	36A (Tc)	44 mOhm @ 18A, 10V	2V @ 250µA	74nC @ 5V	1800pF @ 25V	4V, 10V	±16V
	IRL640L	RFQ VIEW	PDF RFQ	3,241 In-stock	Vishay Siliconix	MOSFET N-CH 200V 17A TO-262		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262-3	-	N-Channel	-	200V	17A (Tc)	180 mOhm @ 10A, 5V	2V @ 250µA	66nC @ 5V	1800pF @ 25V	4V, 5V	±10V
	IRL540NLPBF	RFQ VIEW	PDF RFQ	3,467 In-stock	Infineon Technologies	MOSFET N-CH 100V 36A TO-262		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	3.8W (Ta), 140W (Tc)	N-Channel	-	100V	36A (Tc)	44 mOhm @ 18A, 10V	2V @ 250µA	74nC @ 5V	1800pF @ 25V	4V, 10V	±16V

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