Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPI80P03P405AKSA1
RFQ
VIEW
RFQ
705
In-stock
Infineon Technologies MOSFET P-CH TO262-3 Automotive, AEC-Q101, OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 137W (Tc) P-Channel - 30V 80A (Tc) 5 mOhm @ 80A, 10V 4V @ 253µA 130nC @ 10V 10300pF @ 25V 10V ±20V
IRFSL7762PBF
RFQ
VIEW
RFQ
3,087
In-stock
Infineon Technologies MOSFET N-CH 75V 85A TO262 HEXFET®, StrongIRFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 140W (Tc) N-Channel - 75V 85A (Tc) 6.7 mOhm @ 51A, 10V 3.7V @ 100µA 130nC @ 10V 4440pF @ 25V 6V, 10V ±20V
IRFSL3507
RFQ
VIEW
RFQ
831
In-stock
Infineon Technologies MOSFET N-CH 75V 97A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 190W (Tc) N-Channel - 75V 97A (Tc) 8.8 mOhm @ 58A, 10V 4V @ 100µA 130nC @ 10V 3540pF @ 50V 10V ±20V
IRF3710L
RFQ
VIEW
RFQ
941
In-stock
Infineon Technologies MOSFET N-CH 100V 57A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 200W (Tc) N-Channel - 100V 57A (Tc) 23 mOhm @ 28A, 10V 4V @ 250µA 130nC @ 10V 3130pF @ 25V 10V ±20V
IRF1010EL
RFQ
VIEW
RFQ
2,609
In-stock
Infineon Technologies MOSFET N-CH 60V 84A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 200W (Tc) N-Channel - 60V 84A (Tc) 12 mOhm @ 50A, 10V 4V @ 250µA 130nC @ 10V 3210pF @ 25V 10V ±20V