- Series :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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7 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,681
In-stock
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Infineon Technologies | MOSFET N-CH 40V 195A TO262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 380W (Tc) | N-Channel | - | 40V | 195A (Ta) | 1.75 mOhm @ 195A, 10V | 4V @ 250µA | 240nC @ 10V | 9200pF @ 25V | 10V | ±20V | |||
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2,306
In-stock
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Infineon Technologies | MOSFET N-CH 24V 195A TO262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 300W (Tc) | N-Channel | - | 24V | 195A (Tc) | 1.65 mOhm @ 195A, 10V | 4V @ 250µA | 240nC @ 10V | 7590pF @ 24V | 10V | ±20V | |||
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2,972
In-stock
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Infineon Technologies | MOSFET N-CH 30V 75A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 231W (Tc) | N-Channel | - | 30V | 75A (Tc) | 2.4 mOhm @ 75A, 10V | 4V @ 150µA | 240nC @ 10V | 6320pF @ 25V | 10V | ±20V | |||
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2,795
In-stock
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Infineon Technologies | MOSFET N-CH 30V 235A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 231W (Tc) | N-Channel | - | 30V | 160A (Tc) | 2.4 mOhm @ 75A, 10V | 4V @ 150µA | 240nC @ 10V | 6320pF @ 25V | 10V | ±20V | |||
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1,452
In-stock
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Infineon Technologies | MOSFET N-CH 100V 80A I2PAK | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 250W (Tc) | N-Channel | - | 100V | 80A (Tc) | 14 mOhm @ 58A, 10V | 2V @ 2mA | 240nC @ 10V | 4540pF @ 25V | 4.5V, 10V | ±20V | |||
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2,247
In-stock
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Infineon Technologies | MOSFET N-CH 100V 70A I2PAK | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 250W (Tc) | N-Channel | - | 100V | 70A (Tc) | 16 mOhm @ 50A, 10V | 2V @ 2mA | 240nC @ 10V | 4540pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
3,058
In-stock
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Infineon Technologies | MOSFET N-CH 55V 80A TO-262 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 165W (Tc) | N-Channel | - | 55V | 80A (Tc) | 5.4 mOhm @ 63A, 10V | 4V @ 110µA | 240nC @ 10V | 10760pF @ 25V | 10V | ±20V | |||
