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- Supplier Device Package :
- Power Dissipation (Max) :
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8 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,787
In-stock
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Infineon Technologies | MOSFET N-CH 600V 6.1A TO-262 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 60W (Tc) | N-Channel | - | 600V | 6.1A (Tc) | 600 mOhm @ 3.3A, 10V | 3.5V @ 220µA | 27nC @ 10V | 550pF @ 100V | 10V | ±20V | |||
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VIEW |
644
In-stock
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Infineon Technologies | MOSFET P-CH 100V 6.8A TO262-3 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 48W (Tc) | P-Channel | - | 100V | 6.8A (Tc) | 480 mOhm @ 4A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
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VIEW |
3,573
In-stock
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Infineon Technologies | MOSFET N-CH 650V 7.3A TO-262 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 83W (Tc) | N-Channel | - | 650V | 7.3A (Tc) | 600 mOhm @ 4.6A, 10V | 3.9V @ 350µA | 27nC @ 10V | 790pF @ 25V | 10V | ±20V | |||
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VIEW |
2,018
In-stock
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 100V 9A TO262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 2.1W (Ta), 100W (Tc) | N-Channel | - | 100V | 9A (Ta), 58A (Tc) | 14.5 mOhm @ 20A, 10V | 4.1V @ 250µA | 27nC @ 10V | 1670pF @ 50V | 10V | ±20V | |||
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VIEW |
2,546
In-stock
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ON Semiconductor | MOSFET P-CH 60V 17A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.75W (Ta), 79W (Tc) | P-Channel | - | 60V | 17A (Tc) | 120 mOhm @ 8.5A, 10V | 4V @ 250µA | 27nC @ 10V | 900pF @ 25V | 10V | ±25V | |||
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VIEW |
3,403
In-stock
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Infineon Technologies | MOSFET N-CH 650V 7.3A TO-262 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 83W (Tc) | N-Channel | - | 650V | 7.3A (Tc) | 600 mOhm @ 4.6A, 10V | 3.9V @ 350µA | 27nC @ 10V | 790pF @ 25V | 10V | ±20V | |||
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VIEW |
3,479
In-stock
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Infineon Technologies | MOSFET P-CH 100V 6.8A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 48W (Tc) | P-Channel | - | 100V | 6.8A (Tc) | 480 mOhm @ 4A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
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VIEW |
3,708
In-stock
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STMicroelectronics | MOSFET N CH 500V 12A I2PAK | MDmesh™ II | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 90W (Tc) | N-Channel | - | 500V | 12A (Tc) | 320 mOhm @ 6A, 10V | 4V @ 100µA | 27nC @ 10V | 816pF @ 50V | 10V | ±25V |