- Series :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,542
In-stock
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Infineon Technologies | MOSFET N-CH 85V 67A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 125W (Tc) | N-Channel | - | 85V | 67A (Tc) | 12.6 mOhm @ 67A, 10V | 4V @ 83µA | 64nC @ 10V | 4340pF @ 40V | 10V | ±20V | |||
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VIEW |
972
In-stock
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Infineon Technologies | MOSFET N-CH 100V 67A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 125W (Tc) | N-Channel | - | 100V | 67A (Tc) | 12.9 mOhm @ 67A, 10V | 4V @ 83µA | 65nC @ 10V | 4320pF @ 50V | 10V | ±20V | |||
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VIEW |
3,932
In-stock
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Infineon Technologies | MOSFET N-CH 100V 35A I2PAK | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 150W (Tc) | N-Channel | - | 100V | 35A (Tc) | 44 mOhm @ 26.4A, 10V | 4V @ 83µA | 65nC @ 10V | 1570pF @ 25V | 10V | ±20V |