- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,816
In-stock
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Infineon Technologies | MOSFET N-CH 55V 51A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 80W (Tc) | N-Channel | - | 55V | 51A (Tc) | 13.5 mOhm @ 31A, 10V | 3V @ 250µA | 36nC @ 5V | 1620pF @ 25V | 4.5V, 10V | ±16V | |||
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VIEW |
2,647
In-stock
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Infineon Technologies | MOSFET N-CH 55V 51A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 80W (Tc) | N-Channel | - | 55V | 51A (Tc) | 13.9 mOhm @ 31A, 10V | 4V @ 250µA | 43nC @ 10V | 1420pF @ 25V | 10V | ±20V | |||
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VIEW |
746
In-stock
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Infineon Technologies | MOSFET N-CH 55V 51A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 80W (Tc) | N-Channel | - | 55V | 51A (Tc) | 13.5 mOhm @ 31A, 10V | 3V @ 250µA | 36nC @ 5V | 1620pF @ 25V | 4.5V, 10V | ±16V |