- Manufacture :
- Series :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,321
In-stock
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Infineon Technologies | MOSFET N-CH 55V 75A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 170W (Tc) | N-Channel | 55V | 75A (Tc) | 6.5 mOhm @ 66A, 10V | 4V @ 250µA | 110nC @ 10V | 3450pF @ 25V | 10V | ±20V | |||
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VIEW |
1,814
In-stock
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Infineon Technologies | MOSFET N-CH 75V 75A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 170W (Tc) | N-Channel | 75V | 75A (Tc) | 9.4 mOhm @ 53A, 10V | 4V @ 250µA | 110nC @ 10V | 3270pF @ 25V | 10V | ±20V | |||
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VIEW |
706
In-stock
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Infineon Technologies | MOSFET N-CH 75V 75A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 170W (Tc) | N-Channel | 75V | 75A (Tc) | 9.4 mOhm @ 53A, 10V | 4V @ 250µA | 110nC @ 10V | 3270pF @ 25V | 10V | ±20V | |||
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VIEW |
1,826
In-stock
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Vishay Siliconix | MOSFET N-CH 600V 9.2A TO-262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 | 170W (Tc) | N-Channel | 600V | 9.2A (Tc) | 750 mOhm @ 5.5A, 10V | 4V @ 250µA | 49nC @ 10V | 1400pF @ 25V | 10V | ±30V |