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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRF9520NSPBF	RFQ VIEW	PDF RFQ	2,305 In-stock	Infineon Technologies	MOSFET P-CH 100V 6.8A D2PAK		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3.8W (Ta), 48W (Tc)	P-Channel	-	100V	6.8A (Tc)	480 mOhm @ 4A, 10V	4V @ 250µA	27nC @ 10V	350pF @ 25V	10V	±20V
	IRF9520NSTRR	RFQ VIEW	PDF RFQ	3,438 In-stock	Infineon Technologies	MOSFET P-CH 100V 6.8A D2PAK		HEXFET®	Obsolete	Tape & Reel (TR)	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3.8W (Ta), 48W (Tc)	P-Channel	-	100V	6.8A (Tc)	480 mOhm @ 4A, 10V	4V @ 250µA	27nC @ 10V	350pF @ 25V	10V	±20V
	IRF9520NSTRL	RFQ VIEW	PDF RFQ	3,033 In-stock	Infineon Technologies	MOSFET P-CH 100V 6.8A D2PAK		HEXFET®	Obsolete	Tape & Reel (TR)	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3.8W (Ta), 48W (Tc)	P-Channel	-	100V	6.8A (Tc)	480 mOhm @ 4A, 10V	4V @ 250µA	27nC @ 10V	350pF @ 25V	10V	±20V
	IRF9520NS	RFQ VIEW	PDF RFQ	3,309 In-stock	Infineon Technologies	MOSFET P-CH 100V 6.8A D2PAK		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3.8W (Ta), 48W (Tc)	P-Channel	-	100V	6.8A (Tc)	480 mOhm @ 4A, 10V	4V @ 250µA	27nC @ 10V	350pF @ 25V	10V	±20V

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