- Manufacture :
- Series :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
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5 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,988
In-stock
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Infineon Technologies | MOSFET P-CH 30V 10A 8-SOIC | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 10A (Ta) | 20 mOhm @ 5.6A, 10V | 1V @ 250µA | 92nC @ 10V | 1700pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
2,977
In-stock
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Infineon Technologies | MOSFET N-CH 40V 10A 8-SOIC | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 40V | 10A (Ta) | 13 mOhm @ 10A, 10V | 3V @ 250µA | 32nC @ 4.5V | 2820pF @ 20V | 4.5V, 10V | ±20V | |||
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VIEW |
1,242
In-stock
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Vishay Siliconix | MOSFET N-CH 40V 10A 8-SOIC | TrenchFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.56W (Ta) | N-Channel | - | 40V | 10A (Ta) | 9 mOhm @ 14A, 10V | 3V @ 250µA | 28nC @ 5V | - | 4.5V, 10V | ±20V | |||
|
VIEW |
1,536
In-stock
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Vishay Siliconix | MOSFET P-CH 30V 10A 8-SOIC | TrenchFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.5W (Ta) | P-Channel | - | 30V | 10A (Ta) | 8.5 mOhm @ 14A, 10V | 3V @ 250µA | - | - | 4.5V, 10V | ±25V | |||
|
VIEW |
3,782
In-stock
|
Infineon Technologies | MOSFET P-CH 30V 10A 8-SOIC | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 10A (Ta) | 20 mOhm @ 5.6A, 10V | 1V @ 250µA | 92nC @ 10V | 1700pF @ 25V | 4.5V, 10V | ±20V |