- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Applied Filters :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
|
VIEW |
792
In-stock
|
Taiwan Semiconductor Corporation | MOSFET N-CH 500V 5.6A TO251 | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 (IPAK) | 90W (Tc) | N-Channel | 500V | 5.6A (Ta) | 1.4 Ohm @ 2.8A, 10V | 4V @ 250µA | 25nC @ 10V | 900pF @ 25V | 10V | ±30V | |||
;;3.jpg)
|
VIEW |
2,928
In-stock
|
Infineon Technologies | MOSFET N-CH 150V 18A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 110W (Tc) | N-Channel | 150V | 18A (Tc) | 125 mOhm @ 11A, 10V | 5.5V @ 250µA | 43nC @ 10V | 900pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,271
In-stock
|
ON Semiconductor | MOSFET N-CH 50V 16A I-PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 72W (Tc) | N-Channel | 50V | 16A (Tc) | 47 mOhm @ 16A, 10V | 4V @ 250µA | 80nC @ 20V | 900pF @ 25V | 10V | ±20V | |||
