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- Supplier Device Package :
- Power Dissipation (Max) :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,875
In-stock
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ON Semiconductor | MOSFET P-CH 200V 3.1A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 | 2.5W (Ta), 30W (Tc) | P-Channel | 200V | 3.1A (Tc) | 1.5 Ohm @ 1.6A, 10V | 4V @ 250µA | 19nC @ 10V | 540pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,032
In-stock
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ON Semiconductor | MOSFET P-CH 200V 3.1A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 | 2.5W (Ta), 30W (Tc) | P-Channel | 200V | 3.1A (Tc) | 1.5 Ohm @ 1.6A, 10V | 4V @ 250µA | 19nC @ 10V | 540pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,869
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 2.6A I-PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 2.5W (Ta), 25W (Tc) | N-Channel | 200V | 2.6A (Tc) | 1.5 Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | 10V | ±20V |