- Manufacture :
- Packaging :
- Operating Temperature :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
2,131
In-stock
|
Global Power Technologies Group | MOSFET N-CH 200V 9A IPAK | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 52W (Tc) | N-Channel | - | 200V | 9A (Tc) | 400 mOhm @ 4.5A, 10V | 5V @ 250µA | 8.6nC @ 10V | 414pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,355
In-stock
|
STMicroelectronics | MOSFET N-CH 650V 9A IPAK | MDmesh™ II | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 90W (Tc) | N-Channel | - | 650V | 9A (Tc) | 480 mOhm @ 4.5A, 10V | 4V @ 250µA | 25nC @ 10V | 850pF @ 50V | 10V | ±25V |