- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,274
In-stock
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Infineon Technologies | MOSFET N-CH 75V 170A TO247AC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 310W (Tc) | N-Channel | - | 75V | 170A (Tc) | 4.5 mOhm @ 90A, 10V | 4V @ 250µA | 270nC @ 10V | 7500pF @ 25V | 10V | ±20V | |||
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VIEW |
1,733
In-stock
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Infineon Technologies | MOSFET N-CH 40V 170A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 200W (Tc) | N-Channel | - | 40V | 170A (Tc) | 3.6 mOhm @ 130A, 10V | 4V @ 250µA | 200nC @ 10V | 5890pF @ 25V | 10V | ±20V | |||
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VIEW |
1,789
In-stock
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Infineon Technologies | MOSFET N-CH 100V 170A SUPER247 | HEXFET® | Obsolete | Bulk | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-274AA | SUPER-247 (TO-274AA) | 580W (Tc) | N-Channel | - | 100V | 170A (Tc) | 9 mOhm @ 100A, 10V | 5V @ 250µA | 390nC @ 10V | 6790pF @ 25V | 10V | ±30V | |||
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VIEW |
1,645
In-stock
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Infineon Technologies | MOSFET N-CH 40V 170A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 200°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 230W (Tc) | N-Channel | - | 40V | 170A (Tc) | 4 mOhm @ 100A, 10V | 4V @ 250µA | 260nC @ 10V | 6950pF @ 25V | 10V | ±20V |