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Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,745
In-stock
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Infineon Technologies | MOSFET N-CH 240V 350MA SOT-223 | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | Depletion Mode | 240V | 350mA (Ta) | 6 Ohm @ 350mA, 10V | 1V @ 108µA | 5.7nC @ 5V | 108pF @ 25V | 0V, 10V | ±20V | |||
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VIEW |
2,748
In-stock
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Infineon Technologies | MOSFET N-CH 240V 350MA SOT-223 | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | Depletion Mode | 240V | 350mA (Ta) | 6 Ohm @ 350mA, 10V | 1V @ 108µA | 5.7nC @ 5V | 108pF @ 25V | 0V, 10V | ±20V | |||
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VIEW |
877
In-stock
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Infineon Technologies | MOSFET N-CH 240V 350MA SOT223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | Depletion Mode | 240V | 350mA (Ta) | 6 Ohm @ 350mA, 10V | 1V @ 108µA | 5.7nC @ 5V | 108pF @ 25V | 0V, 10V | ±20V | |||
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VIEW |
730
In-stock
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Infineon Technologies | MOSFET N-CH 240V 350MA SOT223 | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | Depletion Mode | 240V | 350mA (Ta) | 6 Ohm @ 350mA, 10V | 1V @ 108µA | 5.7nC @ 5V | 108pF @ 25V | 0V, 10V | ±20V |