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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,580
In-stock
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Infineon Technologies | MOSFET N-CH 100V 10.3A TO-220 | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 50W (Tc) | N-Channel | - | 100V | 10.3A (Tc) | 170 mOhm @ 7.8A, 10V | 4V @ 21µA | 19.4nC @ 10V | 426pF @ 25V | 10V | ±20V | |||
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VIEW |
3,049
In-stock
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Infineon Technologies | MOSFET N-CH 100V 10.3A D2PAK | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 50W (Tc) | N-Channel | - | 100V | 10.3A (Tc) | 170 mOhm @ 7.8A, 10V | 4V @ 21µA | 19.4nC @ 10V | 426pF @ 25V | 10V | ±20V | |||
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VIEW |
813
In-stock
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Infineon Technologies | MOSFET N-CH 100V 10.3A D2PAK | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 50W (Tc) | N-Channel | - | 100V | 10.3A (Tc) | 170 mOhm @ 7.8A, 10V | 4V @ 21µA | 19.4nC @ 10V | 426pF @ 25V | 10V | ±20V |