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- Supplier Device Package :
- Power Dissipation (Max) :
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6 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,302
In-stock
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Infineon Technologies | MOSFET N-CH 500V 400MA SOT-223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 500V | 400mA (Ta) | 4 Ohm @ 400mA, 10V | 4V @ 1mA | - | 400pF @ 25V | 10V | ±20V | ||||
VIEW |
1,682
In-stock
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Infineon Technologies | MOSFET P-CH 60V 18.6A TO-252 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 80W (Tc) | P-Channel | - | 60V | 18.6A (Tc) | 130 mOhm @ 13.2A, 10V | 4V @ 1mA | 33nC @ 10V | 860pF @ 25V | 10V | ±20V | ||||
VIEW |
3,028
In-stock
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Infineon Technologies | MOSFET P-CH 60V 2.9A SOT-223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 60V | 2.9A (Ta) | 130 mOhm @ 2.9A, 10V | 4V @ 1mA | 33nC @ 10V | 875pF @ 25V | 10V | ±20V | ||||
VIEW |
2,046
In-stock
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Infineon Technologies | MOSFET N-CH 100V 1.7A SOT-223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 100V | 1.7A (Ta) | 300 mOhm @ 1.7A, 10V | 4V @ 1mA | - | 550pF @ 25V | 10V | ±20V | ||||
VIEW |
2,439
In-stock
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Infineon Technologies | MOSFET N-CH 200V 14.5A TO263 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 95W (Tc) | N-Channel | - | 200V | 14.5A (Tc) | 200 mOhm @ 9A, 10V | 4V @ 1mA | - | 1120pF @ 25V | 10V | ±20V | ||||
VIEW |
1,363
In-stock
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Infineon Technologies | MOSFET N-CH 200V 7A TO252 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 40W (Tc) | N-Channel | - | 200V | 7A (Tc) | 400 mOhm @ 4.5A, 10V | 4V @ 1mA | 31.5nC @ 10V | 530pF @ 25V | 10V | ±20V |