- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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9 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,555
In-stock
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Infineon Technologies | MOSFET N-CH 200V 14.5A TO262-3 | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 95W (Tc) | N-Channel | - | 200V | 14.5A (Tc) | 200 mOhm @ 9A, 5V | 4V @ 1mA | - | 1120pF @ 25V | 5V | ±20V | |||
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VIEW |
1,452
In-stock
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Infineon Technologies | MOSFET N-CH 100V 80A I2PAK | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 250W (Tc) | N-Channel | - | 100V | 80A (Tc) | 14 mOhm @ 58A, 10V | 2V @ 2mA | 240nC @ 10V | 4540pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
1,455
In-stock
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Infineon Technologies | MOSFET N-CH 55V 80A I2PAK | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 8 mOhm @ 80A, 10V | 4V @ 240µA | 187nC @ 10V | 3660pF @ 25V | 10V | ±20V | |||
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VIEW |
2,247
In-stock
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Infineon Technologies | MOSFET N-CH 100V 70A I2PAK | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 250W (Tc) | N-Channel | - | 100V | 70A (Tc) | 16 mOhm @ 50A, 10V | 2V @ 2mA | 240nC @ 10V | 4540pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
792
In-stock
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Infineon Technologies | MOSFET N-CH 100V 47A I2PAK | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 175W (Tc) | N-Channel | - | 100V | 47A (Tc) | 26 mOhm @ 33A, 10V | 2V @ 2mA | 135nC @ 10V | 2500pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
3,887
In-stock
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Infineon Technologies | MOSFET N-CH 100V 47A I2PAK | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 175W (Tc) | N-Channel | - | 100V | 47A (Tc) | 33 mOhm @ 33A, 10V | 4V @ 2mA | 105nC @ 10V | 2500pF @ 25V | 10V | ±20V | |||
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VIEW |
3,932
In-stock
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Infineon Technologies | MOSFET N-CH 100V 35A I2PAK | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 150W (Tc) | N-Channel | - | 100V | 35A (Tc) | 44 mOhm @ 26.4A, 10V | 4V @ 83µA | 65nC @ 10V | 1570pF @ 25V | 10V | ±20V | |||
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VIEW |
2,403
In-stock
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Infineon Technologies | MOSFET N-CH 100V 21A TO-262 | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 90W (Tc) | N-Channel | - | 100V | 21A (Tc) | 80 mOhm @ 15A, 10V | 4V @ 44µA | 38.4nC @ 10V | 865pF @ 25V | 10V | ±20V | |||
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VIEW |
1,238
In-stock
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Infineon Technologies | MOSFET N-CH 100V 10.3A I2PAK | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 50W (Tc) | N-Channel | - | 100V | 10.3A (Tc) | 154 mOhm @ 8.1A, 10V | 2V @ 21µA | 22nC @ 10V | 444pF @ 25V | 4.5V, 10V | ±20V |