Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SPP04N50C3HKSA1
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2,019
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Infineon Technologies MOSFET N-CH 560V 4.5A TO-220AB CoolMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 50W (Tc) N-Channel - 560V 4.5A (Tc) 950 mOhm @ 2.8A, 10V 3.9V @ 200µA 22nC @ 10V 470pF @ 25V 10V ±20V
SPA04N50C3XKSA1
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3,486
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Infineon Technologies MOSFET N-CH 560V 4.5A TO220FP CoolMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220-FP 31W (Tc) N-Channel - 560V 4.5A (Tc) 950 mOhm @ 2.8A, 10V 3.9V @ 200µA 22nC @ 10V 470pF @ 25V 10V ±20V
SPD04N50C3T
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3,746
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Infineon Technologies MOSFET N-CH 560V 4.5A DPAK CoolMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 50W (Tc) N-Channel - 560V 4.5A (Tc) 950 mOhm @ 2.8A, 10V 3.9V @ 200µA 22nC @ 10V 470pF @ 25V 10V ±20V