Supplier Device Package :
Drain to Source Voltage (Vdss) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SPI11N60CFDHKSA1
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Infineon Technologies MOSFET N-CH 650V 11A TO-262 CoolMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 125W (Tc) N-Channel - 650V 11A (Tc) 440 mOhm @ 7A, 10V 5V @ 500µA 64nC @ 10V 1200pF @ 25V 10V ±20V
SPP11N60CFDHKSA1
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1,397
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Infineon Technologies MOSFET N-CH 600V 11A TO-220 CoolMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 125W (Tc) N-Channel - 600V 11A (Tc) 440 mOhm @ 7A, 10V 5V @ 500µA 64nC @ 10V 1200pF @ 25V 10V ±20V
SPP11N60CFDXKSA1
RFQ
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RFQ
773
In-stock
Infineon Technologies MOSFET N-CH 650V 11A TO-220 CoolMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 125W (Tc) N-Channel - 650V 11A (Tc) 440 mOhm @ 7A, 10V 5V @ 500µA 64nC @ 10V 1200pF @ 25V 10V ±20V