Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPI90R1K0C3XKSA1
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2,852
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Infineon Technologies MOSFET N-CH 900V 5.7A TO-262 CoolMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 89W (Tc) N-Channel 900V 5.7A (Tc) 1 Ohm @ 3.3A, 10V 3.5V @ 370µA 34nC @ 10V 850pF @ 100V 10V ±20V
IPI60R600CPAKSA1
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RFQ
1,787
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Infineon Technologies MOSFET N-CH 600V 6.1A TO-262 CoolMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 60W (Tc) N-Channel 600V 6.1A (Tc) 600 mOhm @ 3.3A, 10V 3.5V @ 220µA 27nC @ 10V 550pF @ 100V 10V ±20V
IPI60R520CPAKSA1
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RFQ
3,861
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Infineon Technologies MOSFET N-CH 600V 6.8A TO-262 CoolMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 66W (Tc) N-Channel 600V 6.8A (Tc) 520 mOhm @ 3.8A, 10V 3.5V @ 340µA 31nC @ 10V 630pF @ 100V 10V ±20V
IPI60R250CPAKSA1
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RFQ
2,764
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Infineon Technologies MOSFET N-CH 650V 12A TO-262 CoolMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 104W (Tc) N-Channel 650V 12A (Tc) 250 mOhm @ 7.8A, 10V 3.5V @ 440µA 35nC @ 10V 1200pF @ 100V 10V ±20V
IPI50R350CP
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RFQ
1,892
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Infineon Technologies MOSFET N-CH 550V 10A TO-262 CoolMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 89W (Tc) N-Channel 550V 10A (Tc) 350 mOhm @ 5.6A, 10V 3.5V @ 370µA 25nC @ 10V 1020pF @ 100V 10V ±20V
IPI50R140CP
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2,430
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Infineon Technologies MOSFET N-CH 550V 23A TO262-3 CoolMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 192W (Tc) N-Channel 550V 23A (Tc) 140 mOhm @ 14A, 10V 3.5V @ 930µA 64nC @ 10V 2540pF @ 100V 10V ±20V
IPI60R299CPXKSA1
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RFQ
3,011
In-stock
Infineon Technologies MOSFET N-CH 600V 11A I2PAK CoolMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 96W (Tc) N-Channel 600V 11A (Tc) 299 mOhm @ 6.6A, 10V 3.5V @ 440µA 29nC @ 10V 1100pF @ 100V 10V ±20V
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RFQ
1,069
In-stock
Infineon Technologies MOSFET N-CH 800V 8A TO262-3 CoolMOS™ Obsolete - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 104W (Tc) N-Channel 800V 8A (Tc) 650 mOhm @ 5.1A, 10V 3.9V @ 470µA 60nC @ 10V 1100pF @ 100V 10V ±20V
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RFQ
2,777
In-stock
Infineon Technologies MOSFET N-CH 900V 6.9A TO262-3 CoolMOS™ Obsolete - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 104W (Tc) N-Channel 900V 6.9A (Tc) 800 mOhm @ 4.1A, 10V 3.5V @ 460µA 42nC @ 10V 1100pF @ 100V 10V ±20V