Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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2SK4209
RFQ
VIEW
RFQ
2,410
In-stock
ON Semiconductor MOSFET N-CH 800V 12A TO-3PB - Obsolete Tray MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3PB 2.5W (Ta), 190W (Tc) N-Channel 800V 12A (Ta) 1.08 Ohm @ 6A, 10V 4V @ 1mA 75nC @ 10V 1500pF @ 30V 10V ±30V
2SK2883(TE24L,Q)
RFQ
VIEW
RFQ
2,955
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 800V 3A TO220SM - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-220SM 75W (Tc) N-Channel 800V 3A (Ta) 3.6 Ohm @ 1.5A, 10V 4V @ 1mA 25nC @ 10V 750pF @ 25V 10V ±30V
STW11NB80
RFQ
VIEW
RFQ
2,177
In-stock
STMicroelectronics MOSFET N-CH 800V 11A TO-247 PowerMESH™ Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247-3 190W (Tc) N-Channel 800V 11A (Tc) 800 mOhm @ 5.5A, 10V 5V @ 250µA 70nC @ 10V 2900pF @ 25V 10V ±30V
STP4NB80
RFQ
VIEW
RFQ
2,377
In-stock
STMicroelectronics MOSFET N-CH 800V 4A TO-220 PowerMESH™ Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 100W (Tc) N-Channel 800V 4A (Tc) 3.3 Ohm @ 2A, 10V 5V @ 250µA 29nC @ 10V 920pF @ 25V 10V ±30V
2SK3047
RFQ
VIEW
RFQ
3,694
In-stock
Panasonic Electronic Components MOSFET N-CH 800V 2A TO-220D - Obsolete Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220D-A1 2W (Ta), 30W (Tc) N-Channel 800V 2A (Tc) 7 Ohm @ 1A, 10V 5V @ 1mA - 350pF @ 20V 10V ±30V