- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
1,700
In-stock
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Infineon Technologies | MOSFET N-CH 25V 30A IPAK | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | PG-TO251-3 | 52W (Tc) | N-Channel | - | 25V | 30A (Tc) | 10.4 mOhm @ 30A, 10V | 2V @ 20µA | 11nC @ 5V | 1358pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,745
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 50A IPAK | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | PG-TO251-3 | 58W (Tc) | N-Channel | - | 30V | 50A (Tc) | 9.3 mOhm @ 50A, 10V | 2V @ 20µA | 13nC @ 5V | 1600pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
2,950
In-stock
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Infineon Technologies | MOSFET N-CH 25V 50A TO-251 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | PG-TO251-3 | 63W (Tc) | N-Channel | - | 25V | 50A (Tc) | 8.8 mOhm @ 30A, 10V | 2V @ 20µA | 13nC @ 5V | 1642pF @ 15V | 4.5V, 10V | ±20V | |||
