- Series :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
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VIEW |
2,724
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 250V 20A TO-220SIS | π-MOSVII | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 250V | 20A (Ta) | 100 mOhm @ 10A, 10V | 3.5V @ 1mA | 55nC @ 10V | 2550pF @ 100V | 10V | ±20V | |||
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VIEW |
1,746
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 13A TO220SIS | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 50W (Tc) | N-Channel | 600V | 13A (Ta) | 500 mOhm @ 6.5A, 10V | 4V @ 1mA | 62nC @ 10V | 3100pF @ 25V | 10V | ±30V | |||
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VIEW |
2,315
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 500V 5A TO220SIS | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | 500V | 5A (Ta) | 1.7 Ohm @ 2.5A, 10V | 4V @ 1mA | 16nC @ 10V | 550pF @ 25V | 10V | ±30V | |||
